一种GaN FET的窄脉冲激光器驱动电源系统设计
2022,30(9):272-279
摘要：针对半导体激光器驱动电路在低纳秒级对激光光脉冲调节困难的问题，研究了一种基于GaN高速半导体器件的半导体激光器的驱动方案，可实现激光光脉冲的宽度、高重复频率的高精度调节；在设计上，利用FPGA门电路现场可编辑、低功耗等特点，基于Xilinx Zynq平台搭建前置时序产生电路，输出时序信号；设计储能电路，通过驱动氮化镓场效应晶体管(GaN FET)作为开关控制储能回路，最终实现激光光脉冲低纳秒级的精密调节；经过实验验证和分析，该驱动电路能稳定输出脉冲宽度3~200 ns可调、重复频率0~1 MHz可调、峰值功率超过70 w、上升沿时间小于5 ns的激光光脉冲信号。
关键词：半导体激光器驱动电路；激光光脉冲调节；FPGA；氮化镓场效应晶体管；低纳秒级精密调节
Design of Narrow Pulse Laser Driving Power Supply Using GaN FET
Abstract：The semiconductor laser drive circuit is difficult to adjust the laser light pulse at the low nanosecond level.In order to solve it, a driving scheme of semiconductor laser using GaN high-speed semiconductor device is studied.It can realize high-precision adjustment of laser light pulse width and high repetition frequency.Firstly,build a pre-sequence generation circuit based on Xilinx Zynq platform to output sequential signals with the characteristics of FPGA gate circuit field editability and low power consumption,etc;secondly,designing energy storage and Controlling the energy storage loop by driving a Gallium Nitride Field Effect Transistor (GaN FET) as a switch;at last,realizating the precise modulation of laser pulse at low nanosecond level.Validated experimentally and analyzed,the driver circuit can stably output laser pulse signals with adjustable pulse width of 3~200ns, adjustable repetition frequency of 0~1MHz, peak power of over 70W and rise time of less than 5ns.
Key words：Semiconductor laser driver circuit;Laser light pulse modulation;FPGA;GaN FET;Low nanosecond precision modulation
收稿日期：2022-04-23
基金项目：
